FDMS007N08LC datasheet, mosfet equivalent, ON Semiconductor

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FDMS007N08LC Features and benefits

* Shielded Gate MOSFET Technology
* Max rDS(on) = 6.7 mW at VGS = 10 V, ID = 21 A
* Max rDS(on) = 9.9 mW at VGS = 4.5 V, ID = 17 A
* 50% Lower Qrr than Ot.

FDMS007N08LC Application

* Primary DC−DC MOSFET
* Synchronous Rectifier in DC−DC and AC−DC
* Motor Drive
* Solar www.onsemi.com .

FDMS007N08LC Description

This N−Channel MV MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance wit.

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